IRF9541

Manufacturer :

Harris Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

19A (Tc)

Gate Charge (Qg) (Max) @ Vgs :

90 nC @ 10 V

FET Type :

P-Channel

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

1100 pF @ 25 V

Series :

-

Pulsed Drain Current-Max (IDM) :

76 A

JESD-609 Code :

e0

JEDEC-95 Code :

TO-220AB

Operating Temperature :

-55°C ~ 175°C (TJ)

JESD-30 Code :

R-PSFM-T3

Power Dissipation (Max) :

150W (Tc)

Avalanche Energy Rating (Eas) :

960 mJ

Pbfree Code :

No

Rds On (Max) @ Id, Vgs :

200mOhm @ 10A, 10V

RoHS :

Non-Compliant

Package / Case :

TO-220-3

Qualification Status :

COMMERCIAL

Drain to Source Voltage (Vdss) :

80 V

Vgs (Max) :

±20V

Surface Mount :

No

Supplier Device Package :

TO-220-3

Operating Mode :

ENHANCEMENT MODE

Terminal Position :

Single

Manufacturer :

Rochester Electronics LLC

Terminal Finish :

TIN LEAD

Product Status :

Active

Mounting Type :

Through Hole

Case Connection :

DRAIN

DS Breakdown Voltage-Min :

80 V

Package Shape :

RECTANGULAR

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Transistor Element Material :

SILICON

Reach Compliance Code :

Unknown

Drive Voltage (Max Rds On, Min Rds On) :

10V

Drain-source On Resistance-Max :

0.2 Ω

Number of Terminals :

3

Terminal Form :

THROUGH-HOLE

Configuration :

SINGLE WITH BUILT-IN DIODE

FET Feature :

-

Transistor Application :

SWITCHING

Polarity/Channel Type :

P-Channel

Package :

Bulk

Vgs(th) (Max) @ Id :

4V @ 250µA

Peak Reflow Temperature (Cel) :

NOT SPECIFIED