IRF9540PBF
- Mfr.Part #
- IRF9540PBF
- Manufacturer
- Vishay
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET P-CH 100V 19A TO220AB
- Stock
- 83,034
- In Stock :
- 83,034
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Rds On (Max) @ Id, Vgs :
- 200mOhm @ 11A, 10V
- Input Capacitance :
- 1.4nF
- Recovery Time :
- 260 ns
- Current - Continuous Drain (Id) @ 25°C :
- 19A Tc
- Current Rating :
- -19A
- Gate to Source Voltage (Vgs) :
- 20V
- Operating Temperature :
- -55°C~175°C TJ
- Element Configuration :
- Single
- Resistance :
- 200mOhm
- REACH SVHC :
- Unknown
- Number of Channels :
- 1
- Number of Pins :
- 3
- Packaging :
- Tube
- Input Capacitance (Ciss) (Max) @ Vds :
- 1400pF @ 25V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Power Dissipation-Max :
- 150W Tc
- Supplier Device Package :
- TO-220AB
- Weight :
- 6.000006g
- Max Junction Temperature (Tj) :
- 175°C
- Max Operating Temperature :
- 175°C
- Drain to Source Resistance :
- 200mOhm
- Min Operating Temperature :
- -55°C
- Published :
- 2014
- Threshold Voltage :
- -4V
- Package / Case :
- TO-220-3
- Rise Time :
- 73ns
- Fall Time (Typ) :
- 57 ns
- Factory Lead Time :
- 8 Weeks
- FET Type :
- P-Channel
- Power Dissipation :
- 150W
- RoHS Status :
- ROHS3 Compliant
- Width :
- 4.7mm
- Gate Charge (Qg) (Max) @ Vgs :
- 61nC @ 10V
- Vgs (Max) :
- ±20V
- Height :
- 19.89mm
- Mount :
- Through Hole
- Voltage - Rated DC :
- -100V
- Number of Elements :
- 1
- Turn-Off Delay Time :
- 34 ns
- Nominal Vgs :
- -4 V
- Turn On Delay Time :
- 16 ns
- Mounting Type :
- Through Hole
- Length :
- 10.41mm
- Rds On Max :
- 200 mΩ
- Lead Free :
- Lead Free
- Drain to Source Voltage (Vdss) :
- 100V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Drain to Source Breakdown Voltage :
- -100V
- Continuous Drain Current (ID) :
- -19A
- Datasheets
- IRF9540PBF
P-Channel Tube 200mOhm @ 11A, 10V ±20V 1400pF @ 25V 61nC @ 10V 100V TO-220-3
IRF9540PBF Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 1400pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has -100V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals -100V.As a result of its turn-off delay time, which is 34 ns, the device has taken time to charge its input capacitance before drain current conduction begins.In a MOSFET, Drain to Source Resistance is the resistance between the drain and the source when gate-to-source voltage (VGS) is applied to bias it into the on state; in this device, this resistance is 200mOhm.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 16 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The threshold voltage is the point at which an electrical device activates any one of its operations, which for this transistor is -4V.The transistor must receive a 100V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
IRF9540PBF Features
a continuous drain current (ID) of -19A
a drain-to-source breakdown voltage of -100V voltage
the turn-off delay time is 34 ns
single MOSFETs transistor is 200mOhm
a threshold voltage of -4V
a 100V drain to source voltage (Vdss)
IRF9540PBF Applications
There are a lot of Vishay Siliconix
IRF9540PBF applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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