IRF9540NPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Time@Peak Reflow Temperature-Max (s) :

30

Drain to Source Voltage (Vdss) :

100V

Operating Temperature :

-55°C~150°C TJ

Radiation Hardening :

No

Package / Case :

TO-220-3

Series :

HEXFET®

Recovery Time :

220 ns

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation :

140W

Turn On Delay Time :

15 ns

Element Configuration :

Single

Length :

10.5156mm

JESD-609 Code :

e3

ECCN Code :

EAR99

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Fall Time (Typ) :

51 ns

Threshold Voltage :

-4V

Number of Terminations :

3

Height :

15.24mm

Drain to Source Breakdown Voltage :

-100V

Turn-Off Delay Time :

51 ns

Width :

4.69mm

Vgs(th) (Max) @ Id :

4V @ 250µA

JEDEC-95 Code :

TO-220AB

Current - Continuous Drain (Id) @ 25°C :

23A Tc

REACH SVHC :

No SVHC

RoHS Status :

ROHS3 Compliant

Rise Time :

67ns

FET Type :

P-Channel

Peak Reflow Temperature (Cel) :

250

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Voltage - Rated DC :

-100V

Current Rating :

-23A

Published :

1998

Pulsed Drain Current-Max (IDM) :

76A

Lead Pitch :

2.54mm

Gate Charge (Qg) (Max) @ Vgs :

97nC @ 10V

Power Dissipation-Max :

140W Tc

Lead Free :

Lead Free

Packaging :

Tube

Factory Lead Time :

12 Weeks

Case Connection :

DRAIN

Number of Pins :

3

Mount :

Through Hole

Dual Supply Voltage :

-100V

Resistance :

117mOhm

Rds On (Max) @ Id, Vgs :

117m Ω @ 11A, 10V

Contact Plating :

Tin

Operating Mode :

ENHANCEMENT MODE

Nominal Vgs :

-4 V

Transistor Application :

SWITCHING

Continuous Drain Current (ID) :

-23A

Gate to Source Voltage (Vgs) :

20V

Mounting Type :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

1300pF @ 25V

Vgs (Max) :

±20V

Termination :

Through Hole