IRF9540NL

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Peak Reflow Temperature (Cel) :

225

JESD-609 Code :

e0

Terminal Position :

Single

RoHS Status :

Non-RoHS Compliant

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

117m Ω @ 11A, 10V

Operating Mode :

ENHANCEMENT MODE

Avalanche Energy Rating (Eas) :

430 mJ

Time@Peak Reflow Temperature-Max (s) :

30

Packaging :

Tube

DS Breakdown Voltage-Min :

100V

Case Connection :

DRAIN

Transistor Element Material :

SILICON

HTS Code :

8541.29.00.95

Drain-source On Resistance-Max :

0.117Ohm

Surface Mount :

No

Vgs (Max) :

±20V

Operating Temperature :

-55°C~150°C TJ

Transistor Application :

SWITCHING

Published :

2003

Number of Terminations :

3

Power Dissipation-Max :

3.8W Ta 140W Tc

Series :

HEXFET®

Drain to Source Voltage (Vdss) :

100V

Drain Current-Max (Abs) (ID) :

23A

Pulsed Drain Current-Max (IDM) :

76A

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

JESD-30 Code :

R-PSIP-T3

Mounting Type :

Through Hole

Vgs(th) (Max) @ Id :

4V @ 250µA

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Finish :

Tin/Lead (Sn/Pb)

Gate Charge (Qg) (Max) @ Vgs :

97nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

23A Tc

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

1300pF @ 25V

Configuration :

SINGLE WITH BUILT-IN DIODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

P-Channel

Qualification Status :

Not Qualified