IRF9530STRRPBF

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Turn On Delay Time :

12 ns

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

300m Ω @ 7.2A, 10V

Factory Lead Time :

8 Weeks

Number of Terminations :

2

Additional Feature :

AVALANCHE RATED

Transistor Application :

SWITCHING

Avalanche Energy Rating (Eas) :

400 mJ

Element Configuration :

Single

ECCN Code :

EAR99

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Temperature :

-55°C~175°C TJ

Pin Count :

4

Power Dissipation :

3.7W

Radiation Hardening :

No

Terminal Finish :

Matte Tin (Sn)

Gate to Source Voltage (Vgs) :

20V

Rise Time :

52ns

Pulsed Drain Current-Max (IDM) :

48A

Turn-Off Delay Time :

31 ns

Time@Peak Reflow Temperature-Max (s) :

40

Weight :

1.437803g

Number of Pins :

3

Fall Time (Typ) :

39 ns

JESD-609 Code :

e3

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

3.7W Ta 88W Tc

Published :

2017

Terminal Form :

Gull wing

Length :

10.67mm

Width :

9.65mm

Vgs (Max) :

±20V

Continuous Drain Current (ID) :

-12A

Height :

4.83mm

Input Capacitance (Ciss) (Max) @ Vds :

860pF @ 25V

JESD-30 Code :

R-PSSO-G2

Case Connection :

DRAIN

Current - Continuous Drain (Id) @ 25°C :

12A Tc

Number of Channels :

1

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

38nC @ 10V

Drain to Source Voltage (Vdss) :

100V

Mount :

Surface Mount

Number of Elements :

1

Packaging :

Tape and Reel (TR)

Pbfree Code :

yes

Vgs(th) (Max) @ Id :

4V @ 250µA

Peak Reflow Temperature (Cel) :

260

FET Type :

P-Channel

RoHS Status :

ROHS3 Compliant

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB