IRF9530S
- Mfr.Part #
- IRF9530S
- Manufacturer
- Vishay
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET P-CH 100V 12A D2PAK
- Stock
- 6,700
- In Stock :
- 6,700
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain to Source Voltage (Vdss) :
- 100V
- Fall Time (Typ) :
- 39 ns
- Min Operating Temperature :
- -55°C
- Power Dissipation-Max :
- 3.7W Ta 88W Tc
- Gate to Source Voltage (Vgs) :
- 20V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Packaging :
- Tube
- Rise Time :
- 52ns
- Published :
- 2017
- Height :
- 4.83mm
- Input Capacitance (Ciss) (Max) @ Vds :
- 860pF @ 25V
- Weight :
- 1.437803g
- Mounting Type :
- Surface Mount
- Element Configuration :
- Single
- Turn-Off Delay Time :
- 31 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 38nC @ 10V
- Lead Free :
- Contains Lead
- Voltage - Rated DC :
- -100V
- Current Rating :
- -14A
- Length :
- 10.67mm
- Operating Temperature :
- -55°C~175°C TJ
- Rds On (Max) @ Id, Vgs :
- 300mOhm @ 7.2A, 10V
- Continuous Drain Current (ID) :
- 12A
- Max Operating Temperature :
- 175°C
- Supplier Device Package :
- D2PAK
- Turn On Delay Time :
- 12 ns
- Width :
- 9.65mm
- Input Capacitance :
- 860pF
- Rds On Max :
- 300 mΩ
- RoHS Status :
- Non-RoHS Compliant
- Vgs (Max) :
- ±20V
- Drain to Source Resistance :
- 300mOhm
- Current - Continuous Drain (Id) @ 25°C :
- 12A Tc
- Number of Channels :
- 1
- FET Type :
- P-Channel
- Mount :
- Surface Mount
- Datasheets
- IRF9530S
P-Channel Tube 300mOhm @ 7.2A, 10V ±20V 860pF @ 25V 38nC @ 10V 100V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRF9530S Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 860pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 12A. Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 31 ns. Drain to Source Resistance is the resistance between the drain and the source of a MOSFET when a specific gate-to-source voltage (VGS) is applied to bias the device to the on state, and the resistance of this device is 300mOhm. Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 12 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Operating this transistor requires a 100V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
IRF9530S Features
a continuous drain current (ID) of 12A
the turn-off delay time is 31 ns
single MOSFETs transistor is 300mOhm
a 100V drain to source voltage (Vdss)
IRF9530S Applications
There are a lot of Vishay Siliconix
IRF9530S applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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