IRF9530NSTRR

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Case Connection :

DRAIN

Mounting Type :

Surface Mount

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Packaging :

Tape and Reel (TR)

Pulsed Drain Current-Max (IDM) :

56A

Vgs(th) (Max) @ Id :

4V @ 250µA

Number of Terminations :

2

Time@Peak Reflow Temperature-Max (s) :

30

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Terminal Position :

Single

Drain Current-Max (Abs) (ID) :

14A

Qualification Status :

Not Qualified

Current - Continuous Drain (Id) @ 25°C :

14A Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

JESD-609 Code :

e3

Drain to Source Voltage (Vdss) :

100V

FET Type :

P-Channel

Gate Charge (Qg) (Max) @ Vgs :

58nC @ 10V

Operating Temperature :

-55°C~175°C TJ

RoHS Status :

Non-RoHS Compliant

Drain-source On Resistance-Max :

0.2Ohm

ECCN Code :

EAR99

Surface Mount :

yes

Transistor Element Material :

SILICON

Power Dissipation-Max :

3.8W Ta 79W Tc

Rds On (Max) @ Id, Vgs :

200m Ω @ 8.4A, 10V

JESD-30 Code :

R-PSSO-G2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DS Breakdown Voltage-Min :

100V

Configuration :

SINGLE WITH BUILT-IN DIODE

Published :

1998

Transistor Application :

SWITCHING

Terminal Form :

Gull wing

Peak Reflow Temperature (Cel) :

260

Series :

HEXFET®

Input Capacitance (Ciss) (Max) @ Vds :

760pF @ 25V

Number of Elements :

1

Avalanche Energy Rating (Eas) :

250 mJ

Vgs (Max) :

±20V

Operating Mode :

ENHANCEMENT MODE