IRF9530NSTRLPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

14A Tc

Transistor Application :

SWITCHING

Case Connection :

DRAIN

Input Capacitance (Ciss) (Max) @ Vds :

760pF @ 25V

Threshold Voltage :

-4V

Rise Time :

58ns

Nominal Vgs :

-4 V

Height :

5.084mm

REACH SVHC :

No SVHC

Peak Reflow Temperature (Cel) :

260

Gate Charge (Qg) (Max) @ Vgs :

58nC @ 10V

Recovery Time :

190 ns

Current Rating :

-14A

Power Dissipation :

3.8W

FET Type :

P-Channel

Turn-Off Delay Time :

45 ns

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Resistance :

200mOhm

Terminal Form :

Gull wing

Drive Voltage (Max Rds On,Min Rds On) :

10V

Avalanche Energy Rating (Eas) :

250 mJ

RoHS Status :

ROHS3 Compliant

JESD-30 Code :

R-PSSO-G2

JESD-609 Code :

e3

Factory Lead Time :

12 Weeks

Published :

1998

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Number of Channels :

1

Vgs(th) (Max) @ Id :

4V @ 250µA

Continuous Drain Current (ID) :

-14A

Contact Plating :

Tin

Number of Terminations :

2

Length :

10.668mm

Lead Free :

Contains Lead, Lead Free

Voltage - Rated DC :

-100V

Vgs (Max) :

±20V

Dual Supply Voltage :

100V

Gate to Source Voltage (Vgs) :

20V

Pulsed Drain Current-Max (IDM) :

56A

Radiation Hardening :

No

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Packaging :

Tape and Reel (TR)

Series :

HEXFET®

Rds On (Max) @ Id, Vgs :

200m Ω @ 8.4A, 10V

Drain to Source Breakdown Voltage :

-100V

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

30

Max Junction Temperature (Tj) :

175°C

Mounting Type :

Surface Mount

Number of Pins :

3

Fall Time (Typ) :

46 ns

Width :

9.65mm

Element Configuration :

Single

Turn On Delay Time :

15 ns

Mount :

Surface Mount

Power Dissipation-Max :

3.8W Ta 79W Tc

Operating Temperature :

-55°C~175°C TJ

Transistor Element Material :

SILICON