IRF9530NSPBF
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- Mfr.Part #
- IRF9530NSPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET P-CH 100V 14A D2PAK
- Stock
- 162,453
- In Stock ：
- 162,453
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Series :
- HEXFET®
- FET Type :
- P-Channel
- ECCN Code :
- EAR99
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Rds On (Max) @ Id, Vgs :
- 200m Ω @ 8.4A, 10V
- Factory Lead Time :
- 14 Weeks
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Vgs (Max) :
- ±20V
- Drain to Source Voltage (Vdss) :
- 100V
- Gate Charge (Qg) (Max) @ Vgs :
- 58nC @ 10V
- Reach Compliance Code :
- not_compliant
- Operating Temperature :
- -55°C~175°C TJ
- Published :
- 1998
- Power Dissipation-Max :
- 3.8W Ta 79W Tc
- RoHS Status :
- ROHS3 Compliant
- Current - Continuous Drain (Id) @ 25°C :
- 14A Tc
- Packaging :
- Tube
- Mounting Type :
- Surface Mount
- Input Capacitance (Ciss) (Max) @ Vds :
- 760pF @ 25V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Datasheets
- IRF9530NSPBF
P-Channel Tube 200m Ω @ 8.4A, 10V ±20V 760pF @ 25V 58nC @ 10V 100V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRF9530NSPBF Description
The IRF9530NSPBF is a -100V single P-channel HEXFET? Power MOSFET. The IRF9530NSPBF utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFET is well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
IRF9530NSPBF Features
-
Advanced process technology
-
Fast switching
-
Fully avalanche rated
-
175°C Operating temperature
-
Surface Mount
IRF9530NSPBF Applications
-
Induction furnaces
-
Arc furnaces and arc welders
-
Steel rolling mills
-
Large motors with periodic loading
-
Thyristor drives
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