IRF9530NS

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-30 Code :

R-PSSO-G2

JESD-609 Code :

e3

Drain Current-Max (Abs) (ID) :

14A

Configuration :

SINGLE WITH BUILT-IN DIODE

Qualification Status :

Not Qualified

Surface Mount :

yes

HTS Code :

8541.29.00.95

Current - Continuous Drain (Id) @ 25°C :

14A Tc

Gate Charge (Qg) (Max) @ Vgs :

58nC @ 10V

Terminal Form :

Gull wing

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

200m Ω @ 8.4A, 10V

Mounting Type :

Surface Mount

RoHS Status :

Non-RoHS Compliant

Operating Temperature :

-55°C~175°C TJ

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Drain-source On Resistance-Max :

0.2Ohm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Series :

HEXFET®

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

1998

Packaging :

Tube

Transistor Application :

SWITCHING

Case Connection :

DRAIN

Time@Peak Reflow Temperature-Max (s) :

30

Peak Reflow Temperature (Cel) :

225

Input Capacitance (Ciss) (Max) @ Vds :

760pF @ 25V

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

4V @ 250µA

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Vgs (Max) :

±20V

Drain to Source Voltage (Vdss) :

100V

DS Breakdown Voltage-Min :

100V

FET Type :

P-Channel

Terminal Position :

Single

Transistor Element Material :

SILICON

Avalanche Energy Rating (Eas) :

250 mJ

Pulsed Drain Current-Max (IDM) :

56A

Power Dissipation-Max :

3.8W Ta 79W Tc

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Number of Elements :

1

Number of Terminations :

2