IRF9530NPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Avalanche Energy Rating (Eas) :

250 mJ

Mount :

Through Hole

Factory Lead Time :

12 Weeks

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s) :

30

Drive Voltage (Max Rds On,Min Rds On) :

10V

Packaging :

Tube

ECCN Code :

EAR99

Gate Charge (Qg) (Max) @ Vgs :

58nC @ 10V

Number of Terminations :

3

Rise Time :

58ns

Power Dissipation-Max :

79W Tc

Pulsed Drain Current-Max (IDM) :

56A

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Gate to Source Voltage (Vgs) :

20V

Width :

4.69mm

Radiation Hardening :

No

Package / Case :

TO-220-3

Dual Supply Voltage :

-100V

REACH SVHC :

No SVHC

Turn-Off Delay Time :

45 ns

Fall Time (Typ) :

46 ns

Power Dissipation :

79W

Length :

10.5156mm

Lead Pitch :

2.54mm

Contact Plating :

Tin

Number of Elements :

1

Continuous Drain Current (ID) :

-14A

Vgs(th) (Max) @ Id :

4V @ 250µA

Number of Pins :

3

Element Configuration :

Single

Voltage - Rated DC :

-100V

Height :

15.24mm

Input Capacitance (Ciss) (Max) @ Vds :

760pF @ 25V

Transistor Element Material :

SILICON

Vgs (Max) :

±20V

Turn On Delay Time :

15 ns

Operating Temperature :

-55°C~175°C TJ

Termination :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Lead Free :

Lead Free

FET Type :

P-Channel

Current Rating :

-14A

Nominal Vgs :

-4 V

Threshold Voltage :

-4V

Peak Reflow Temperature (Cel) :

250

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

100V

Recovery Time :

190 ns

Mounting Type :

Through Hole

JEDEC-95 Code :

TO-220AB

Published :

1998

Current - Continuous Drain (Id) @ 25°C :

14A Tc

Series :

HEXFET®

Rds On (Max) @ Id, Vgs :

200m Ω @ 8.4A, 10V

Case Connection :

DRAIN

Drain to Source Breakdown Voltage :

-100V

Resistance :

200mOhm