IRF9530NL

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

200m Ω @ 8.4A, 10V

Avalanche Energy Rating (Eas) :

250 mJ

Series :

HEXFET®

Mounting Type :

Through Hole

Power Dissipation-Max :

3.8W Ta 79W Tc

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

JESD-30 Code :

R-PSIP-T3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

14A Tc

Input Capacitance (Ciss) (Max) @ Vds :

760pF @ 25V

Packaging :

Tube

Pulsed Drain Current-Max (IDM) :

56A

Published :

1998

FET Type :

P-Channel

ECCN Code :

EAR99

Additional Feature :

AVALANCHE RATED

Number of Terminations :

3

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

58nC @ 10V

Transistor Application :

SWITCHING

Case Connection :

DRAIN

Drain-source On Resistance-Max :

0.2Ohm

DS Breakdown Voltage-Min :

100V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain Current-Max (Abs) (ID) :

14A

Operating Temperature :

-55°C~175°C TJ

Vgs (Max) :

±20V

Surface Mount :

No

Drain to Source Voltage (Vdss) :

100V

Reach Compliance Code :

Unknown

Transistor Element Material :

SILICON

Terminal Position :

Single

Vgs(th) (Max) @ Id :

4V @ 250µA

RoHS Status :

Non-RoHS Compliant