IRF9520STRRPBF
- Mfr.Part #
- IRF9520STRRPBF
- Manufacturer
- Vishay
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET P-CH 100V 6.8A D2PAK
- Stock
- 1
- In Stock :
- 1
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mount :
- Surface Mount
- Width :
- 9.65mm
- Min Operating Temperature :
- -55°C
- FET Type :
- P-Channel
- Length :
- 10.67mm
- Input Capacitance :
- 390pF
- Published :
- 2012
- Weight :
- 1.437803g
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Number of Elements :
- 1
- Number of Channels :
- 1
- Rds On Max :
- 600 mΩ
- Gate to Source Voltage (Vgs) :
- 20V
- Power Dissipation-Max :
- 3.7W Ta 60W Tc
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Input Capacitance (Ciss) (Max) @ Vds :
- 390pF @ 25V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Supplier Device Package :
- D2PAK
- RoHS Status :
- ROHS3 Compliant
- Current - Continuous Drain (Id) @ 25°C :
- 6.8A Tc
- Max Operating Temperature :
- 175°C
- Factory Lead Time :
- 11 Weeks
- Continuous Drain Current (ID) :
- -6.8A
- Drain to Source Voltage (Vdss) :
- 100V
- Mounting Type :
- Surface Mount
- Element Configuration :
- Single
- Number of Pins :
- 3
- Power Dissipation :
- 3.7W
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Turn On Delay Time :
- 9.6 ns
- Drain to Source Resistance :
- 600mOhm
- Height :
- 4.83mm
- Packaging :
- Tape and Reel (TR)
- Fall Time (Typ) :
- 25 ns
- Radiation Hardening :
- No
- Operating Temperature :
- -55°C~175°C TJ
- Vgs (Max) :
- ±20V
- Turn-Off Delay Time :
- 21 ns
- Rds On (Max) @ Id, Vgs :
- 600mOhm @ 4.1A, 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 18nC @ 10V
- Rise Time :
- 29ns
- Datasheets
- IRF9520STRRPBF
P-Channel Tape & Reel (TR) 600mOhm @ 4.1A, 10V ±20V 390pF @ 25V 18nC @ 10V 100V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRF9520STRRPBF Overview
The maximum input capacitance of this device is 390pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is -6.8A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 21 ns.MOSFETs exhibit Drain-to-Source Resistance when a specific gate-to-source voltage (VGS) is applied to bias them into the on state, and this device's resistance is 600mOhm.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 9.6 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.The drain-to-source voltage (Vdss) of this transistor needs to be at 100V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
IRF9520STRRPBF Features
a continuous drain current (ID) of -6.8A
the turn-off delay time is 21 ns
single MOSFETs transistor is 600mOhm
a 100V drain to source voltage (Vdss)
IRF9520STRRPBF Applications
There are a lot of Vishay Siliconix
IRF9520STRRPBF applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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