IRF9520NSPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Turn On Delay Time :

14 ns

Factory Lead Time :

9 Weeks

Transistor Application :

SWITCHING

Mounting Type :

Surface Mount

Pulsed Drain Current-Max (IDM) :

27A

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Rise Time :

47ns

Lead Free :

Lead Free

Terminal Form :

Gull wing

ECCN Code :

EAR99

Recovery Time :

150 ns

Vgs (Max) :

±20V

Current - Continuous Drain (Id) @ 25°C :

6.8A Tc

Mount :

Surface Mount

Vgs(th) (Max) @ Id :

4V @ 250µA

Operating Temperature :

-55°C~175°C TJ

Gate Charge (Qg) (Max) @ Vgs :

27nC @ 10V

Continuous Drain Current (ID) :

-6.8A

Packaging :

Tube

Power Dissipation-Max :

3.8W Ta 48W Tc

Nominal Vgs :

-4 V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

REACH SVHC :

No SVHC

Peak Reflow Temperature (Cel) :

260

Series :

HEXFET®

Drain to Source Voltage (Vdss) :

100V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Terminations :

2

Turn-Off Delay Time :

28 ns

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

20V

Transistor Element Material :

SILICON

Height :

4.826mm

Width :

9.65mm

Power Dissipation :

3.8W

Length :

10.668mm

Rds On (Max) @ Id, Vgs :

480m Ω @ 4A, 10V

Element Configuration :

Single

Threshold Voltage :

-4V

JESD-30 Code :

R-PSSO-G2

Published :

1998

FET Type :

P-Channel

Time@Peak Reflow Temperature-Max (s) :

30

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Number of Pins :

3

Operating Mode :

ENHANCEMENT MODE

Case Connection :

DRAIN

Number of Elements :

1

Resistance :

480mOhm

JESD-609 Code :

e3

Drain to Source Breakdown Voltage :

-100V

RoHS Status :

RoHS Compliant

Fall Time (Typ) :

31 ns

Input Capacitance (Ciss) (Max) @ Vds :

350pF @ 25V