IRF9520NS

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tube

Number of Elements :

1

Published :

1998

Configuration :

SINGLE WITH BUILT-IN DIODE

Surface Mount :

yes

Qualification Status :

Not Qualified

Pulsed Drain Current-Max (IDM) :

27A

Vgs (Max) :

±20V

Terminal Position :

Single

Current - Continuous Drain (Id) @ 25°C :

6.8A Tc

Rds On (Max) @ Id, Vgs :

480m Ω @ 4A, 10V

Drain-source On Resistance-Max :

0.48Ohm

Number of Terminations :

2

Power Dissipation-Max :

3.8W Ta 48W Tc

Input Capacitance (Ciss) (Max) @ Vds :

350pF @ 25V

RoHS Status :

Non-RoHS Compliant

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs(th) (Max) @ Id :

4V @ 250µA

Peak Reflow Temperature (Cel) :

225

Series :

HEXFET®

Drain to Source Voltage (Vdss) :

100V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Transistor Element Material :

SILICON

FET Type :

P-Channel

Mounting Type :

Surface Mount

Avalanche Energy Rating (Eas) :

140 mJ

Time@Peak Reflow Temperature-Max (s) :

30

HTS Code :

8541.29.00.95

Gate Charge (Qg) (Max) @ Vgs :

27nC @ 10V

Case Connection :

DRAIN

ECCN Code :

EAR99

JESD-30 Code :

R-PSSO-G2

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Gull wing

Terminal Finish :

Tin/Lead (Sn/Pb)

JESD-609 Code :

e0

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~175°C TJ

DS Breakdown Voltage-Min :

100V

Transistor Application :

SWITCHING

Drain Current-Max (Abs) (ID) :

6.8A