IRF9520NPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

6.8A Tc

Turn On Delay Time :

14 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Recovery Time :

150 ns

Operating Mode :

ENHANCEMENT MODE

Power Dissipation :

48W

Number of Pins :

3

Max Power Dissipation :

48W

Drain to Source Breakdown Voltage :

-100V

Case Connection :

DRAIN

Peak Reflow Temperature (Cel) :

250

Element Configuration :

Single

Number of Elements :

1

Mounting Type :

Through Hole

Mount :

Through Hole

JEDEC-95 Code :

TO-220AB

Pulsed Drain Current-Max (IDM) :

27A

Time@Peak Reflow Temperature-Max (s) :

30

Height :

15.24mm

Package / Case :

TO-220-3

Series :

HEXFET®

Dual Supply Voltage :

-100V

Published :

1998

Width :

4.69mm

JESD-609 Code :

e3

Current Rating :

-6.8A

Fall Time (Typ) :

31 ns

Factory Lead Time :

12 Weeks

Lead Pitch :

2.54mm

Lead Free :

Lead Free

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

480m Ω @ 4A, 10V

Turn-Off Delay Time :

28 ns

Radiation Hardening :

No

Rise Time :

47ns

Input Capacitance (Ciss) (Max) @ Vds :

350pF @ 25V

ECCN Code :

EAR99

Gate Charge (Qg) (Max) @ Vgs :

27nC @ 10V

Packaging :

Tube

Contact Plating :

Tin

FET Type :

P-Channel

Threshold Voltage :

-4V

Transistor Application :

SWITCHING

Drain to Source Voltage (Vdss) :

100V

Resistance :

480mOhm

Nominal Vgs :

-4 V

Gate to Source Voltage (Vgs) :

20V

Continuous Drain Current (ID) :

-6.8A

Vgs(th) (Max) @ Id :

4V @ 250µA

Voltage - Rated DC :

-100V

REACH SVHC :

No SVHC

Number of Terminations :

3

Max Operating Temperature :

175°C

Min Operating Temperature :

-55°C

Length :

10.54mm