IRF9510STRR
- Mfr.Part #
- IRF9510STRR
- Manufacturer
- Vishay
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET P-CH 100V 4A D2PAK
- Stock
- 6,282
- In Stock :
- 6,282
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Transistor Application :
- SWITCHING
- Transistor Element Material :
- SILICON
- Rise Time :
- 27ns
- Gate Charge (Qg) (Max) @ Vgs :
- 8.7nC @ 10V
- Configuration :
- Single
- Operating Mode :
- ENHANCEMENT MODE
- Terminal Form :
- Gull wing
- Pulsed Drain Current-Max (IDM) :
- 16A
- JESD-609 Code :
- e0
- Mount :
- Surface Mount
- Operating Temperature :
- -55°C~175°C TJ
- Avalanche Energy Rating (Eas) :
- 200 mJ
- Voltage - Rated DC :
- -100V
- Case Connection :
- DRAIN
- Number of Elements :
- 1
- Drain to Source Voltage (Vdss) :
- 100V
- ECCN Code :
- EAR99
- Reach Compliance Code :
- Unknown
- Terminal Position :
- Single
- RoHS Status :
- Non-RoHS Compliant
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- FET Type :
- P-Channel
- Continuous Drain Current (ID) :
- 4A
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- JESD-30 Code :
- R-PSSO-G2
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs (Max) :
- ±20V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Number of Terminations :
- 2
- Qualification Status :
- Not Qualified
- Input Capacitance (Ciss) (Max) @ Vds :
- 200pF @ 25V
- Current Rating :
- -4A
- Terminal Finish :
- TIN LEAD
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Pin Count :
- 4
- Drain Current-Max (Abs) (ID) :
- 4A
- Power Dissipation-Max :
- 3.7W Ta 43W Tc
- HTS Code :
- 8541.29.00.95
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Rds On (Max) @ Id, Vgs :
- 1.2 Ω @ 2.4A, 10V
- Current - Continuous Drain (Id) @ 25°C :
- 4A Tc
- Published :
- 2016
- Mounting Type :
- Surface Mount
- Lead Free :
- Contains Lead
- Packaging :
- Tape and Reel (TR)
- Datasheets
- IRF9510STRR
P-Channel Tape & Reel (TR) 1.2 Ω @ 2.4A, 10V ±20V 200pF @ 25V 8.7nC @ 10V 100V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRF9510STRR Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 200 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 200pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 4A amps.A device can conduct a maximum continuous current of [4A] according to its drain current.As far as peak drain current is concerned, its maximum pulsed current is 16A.To operate this transistor, you will need a 100V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
IRF9510STRR Features
the avalanche energy rating (Eas) is 200 mJ
a continuous drain current (ID) of 4A
based on its rated peak drain current 16A.
a 100V drain to source voltage (Vdss)
IRF9510STRR Applications
There are a lot of Vishay Siliconix
IRF9510STRR applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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