IRF9510STRLPBF

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance :

200pF

Number of Pins :

3

Rise Time :

27ns

Published :

2014

Drain to Source Resistance :

1.2Ohm

Number of Elements :

1

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Power Dissipation :

3.7W

FET Type :

P-Channel

Height :

4.83mm

Input Capacitance (Ciss) (Max) @ Vds :

200pF @ 25V

Length :

10.41mm

Power Dissipation-Max :

3.7W Ta 43W Tc

Turn-Off Delay Time :

15 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Single

Factory Lead Time :

8 Weeks

Vgs(th) (Max) @ Id :

4V @ 250µA

Operating Temperature :

-55°C~175°C TJ

Gate to Source Voltage (Vgs) :

20V

Drain to Source Breakdown Voltage :

-100V

Resistance :

1.2Ohm

Rds On (Max) @ Id, Vgs :

1.2Ohm @ 2.4A, 10V

RoHS Status :

ROHS3 Compliant

Min Operating Temperature :

-55°C

Gate Charge (Qg) (Max) @ Vgs :

8.7nC @ 10V

Lead Free :

Lead Free

Fall Time (Typ) :

17 ns

Width :

9.65mm

Number of Channels :

1

Turn On Delay Time :

10 ns

Rds On Max :

1.2 Ω

Radiation Hardening :

No

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mounting Type :

Surface Mount

Weight :

1.437803g

Vgs (Max) :

±20V

Max Operating Temperature :

175°C

Mount :

Surface Mount

Continuous Drain Current (ID) :

-4A

Drain to Source Voltage (Vdss) :

100V

Packaging :

Tape and Reel (TR)

Supplier Device Package :

D2PAK

Current - Continuous Drain (Id) @ 25°C :

4A Tc