IRF9510STRL
- Mfr.Part #
- IRF9510STRL
- Manufacturer
- Vishay
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET P-CH 100V 4A D2PAK
- Stock
- 7,558
- In Stock :
- 7,558
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current Rating :
- -4A
- Drain to Source Resistance :
- 1.2Ohm
- Mounting Type :
- Surface Mount
- Element Configuration :
- Single
- Power Dissipation-Max :
- 3.7W Ta 43W Tc
- Input Capacitance (Ciss) (Max) @ Vds :
- 200pF @ 25V
- Mount :
- Surface Mount
- Current - Continuous Drain (Id) @ 25°C :
- 4A Tc
- Drain to Source Voltage (Vdss) :
- 100V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Rise Time :
- 27ns
- Voltage - Rated DC :
- -100V
- Operating Temperature :
- -55°C~175°C TJ
- Vgs (Max) :
- ±20V
- Continuous Drain Current (ID) :
- 4A
- Published :
- 2016
- Height :
- 4.83mm
- Fall Time (Typ) :
- 17 ns
- Turn On Delay Time :
- 10 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 8.7nC @ 10V
- Rds On (Max) @ Id, Vgs :
- 1.2Ohm @ 2.4A, 10V
- Max Operating Temperature :
- 175°C
- Width :
- 9.65mm
- Input Capacitance :
- 200pF
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Number of Channels :
- 1
- RoHS Status :
- Non-RoHS Compliant
- Weight :
- 1.437803g
- Drain to Source Breakdown Voltage :
- -100V
- Number of Pins :
- 3
- Gate to Source Voltage (Vgs) :
- 20V
- FET Type :
- P-Channel
- Length :
- 10.41mm
- Turn-Off Delay Time :
- 15 ns
- Packaging :
- Tape and Reel (TR)
- Supplier Device Package :
- D2PAK
- Min Operating Temperature :
- -55°C
- Lead Free :
- Contains Lead
- Rds On Max :
- 1.2 Ω
- Datasheets
- IRF9510STRL
P-Channel Tape & Reel (TR) 1.2Ohm @ 2.4A, 10V ±20V 200pF @ 25V 8.7nC @ 10V 100V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRF9510STRL Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 200pF @ 25V.This device has a continuous drain current (ID) of [4A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=-100V, the drain-source breakdown voltage is -100V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 15 ns.MOSFETs have 1.2Ohm resistance between the drain and the source when biased into the on state by a gate-to-source voltage (VGS).During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 10 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.In order to operate this transistor, a voltage of 100V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
IRF9510STRL Features
a continuous drain current (ID) of 4A
a drain-to-source breakdown voltage of -100V voltage
the turn-off delay time is 15 ns
single MOSFETs transistor is 1.2Ohm
a 100V drain to source voltage (Vdss)
IRF9510STRL Applications
There are a lot of Vishay Siliconix
IRF9510STRL applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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