IRF9510S

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±20V

Rise Time :

27ns

Drain to Source Voltage (Vdss) :

100V

Height :

4.83mm

Weight :

1.437803g

Current - Continuous Drain (Id) @ 25°C :

4A Tc

Fall Time (Typ) :

17 ns

Published :

2016

Rds On (Max) @ Id, Vgs :

1.2Ohm @ 2.4A, 10V

Current Rating :

-4A

Power Dissipation-Max :

3.7W Ta 43W Tc

Voltage - Rated DC :

-100V

FET Type :

P-Channel

Number of Channels :

1

Turn On Delay Time :

10 ns

Gate to Source Voltage (Vgs) :

20V

Element Configuration :

Single

Min Operating Temperature :

-55°C

Vgs(th) (Max) @ Id :

4V @ 250µA

Drain to Source Breakdown Voltage :

-100V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

200pF @ 25V

Operating Temperature :

-55°C~175°C TJ

Width :

9.65mm

Power Dissipation :

43W

Mount :

Surface Mount

Rds On Max :

1.2 Ω

Lead Free :

Contains Lead

Gate Charge (Qg) (Max) @ Vgs :

8.7nC @ 10V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

RoHS Status :

Non-RoHS Compliant

Input Capacitance :

200pF

Drain to Source Resistance :

1.2Ohm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Supplier Device Package :

D2PAK

Turn-Off Delay Time :

15 ns

Packaging :

Tube

Length :

10.41mm

Continuous Drain Current (ID) :

4A

Max Operating Temperature :

175°C

Mounting Type :

Surface Mount