IRF9410TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tape and Reel (TR)

Threshold Voltage :

1V

Series :

HEXFET®

Rise Time :

7.3ns

Operating Temperature :

-55°C~150°C TJ

Mount :

Surface Mount

Terminal Finish :

Matte Tin (Sn)

Number of Elements :

1

Turn-Off Delay Time :

23 ns

Mounting Type :

Surface Mount

Terminal Form :

Gull wing

Transistor Element Material :

SILICON

Nominal Vgs :

1 V

Current - Continuous Drain (Id) @ 25°C :

7A Ta

Avalanche Energy Rating (Eas) :

70 mJ

Gate Charge (Qg) (Max) @ Vgs :

27nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Dual Supply Voltage :

30V

Voltage - Rated DC :

30V

Gate to Source Voltage (Vgs) :

20V

Transistor Application :

SWITCHING

Continuous Drain Current (ID) :

7A

FET Type :

N-Channel

Published :

2004

Factory Lead Time :

12 Weeks

Power Dissipation-Max :

2.5W Ta

Input Capacitance (Ciss) (Max) @ Vds :

550pF @ 25V

Lead Free :

Contains Lead, Lead Free

Additional Feature :

AVALANCHE RATED, ULTRA LOW RESISTANCE

JESD-609 Code :

e3

Current Rating :

7A

Height :

1.4986mm

Fall Time (Typ) :

17 ns

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

Package / Case :

8-SOIC (0.154, 3.90mm Width)

ECCN Code :

EAR99

Vgs (Max) :

±20V

Resistance :

30mOhm

Width :

3.9878mm

Length :

4.9784mm

Number of Pins :

8

Turn On Delay Time :

7.3 ns

Radiation Hardening :

No

Vgs(th) (Max) @ Id :

1V @ 250μA

Terminal Position :

Dual

Rds On (Max) @ Id, Vgs :

30m Ω @ 7A, 10V

Number of Terminations :

8

Row Spacing :

6.3 mm

Element Configuration :

Single

Power Dissipation :

2.5W

REACH SVHC :

No SVHC

Drain to Source Breakdown Voltage :

30V