IRF9393TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Continuous Drain Current (ID) :

9.2A

Power Dissipation :

2.5W

Drain to Source Breakdown Voltage :

-30V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Element Configuration :

Single

Drain to Source Voltage (Vdss) :

30V

Terminal Position :

Dual

Radiation Hardening :

No

Drive Voltage (Max Rds On,Min Rds On) :

10V 20V

FET Type :

P-Channel

Width :

3.9878mm

Input Capacitance (Ciss) (Max) @ Vds :

1110pF @ 25V

Operating Mode :

ENHANCEMENT MODE

Length :

4.9784mm

Gate to Source Voltage (Vgs) :

25V

Turn On Delay Time :

16 ns

JESD-609 Code :

e3

Number of Terminations :

8

Height :

1.4986mm

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Surface Mount

Packaging :

Tape and Reel (TR)

Power Dissipation-Max :

2.5W Ta

Number of Elements :

1

Terminal Form :

Gull wing

ECCN Code :

EAR99

Series :

HEXFET®

Gate Charge (Qg) (Max) @ Vgs :

38nC @ 10V

Pulsed Drain Current-Max (IDM) :

75A

Vgs (Max) :

±25V

Fall Time (Typ) :

49 ns

Number of Pins :

8

Turn-Off Delay Time :

55 ns

Terminal Finish :

Matte Tin (Sn)

Vgs(th) (Max) @ Id :

2.4V @ 25μA

Current - Continuous Drain (Id) @ 25°C :

9.2A Ta

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Surface Mount

Rise Time :

44ns

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

12 Weeks

Transistor Application :

SWITCHING

Published :

2010

Rds On (Max) @ Id, Vgs :

13.3m Ω @ 9.2A, 20V