IRF9393PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Mount :

Surface Mount

Transistor Element Material :

SILICON

Terminal Position :

Dual

Turn On Delay Time :

16 ns

Power Dissipation :

2.5W

Operating Temperature :

-55°C~150°C TJ

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Continuous Drain Current (ID) :

9.2A

Gate to Source Voltage (Vgs) :

25V

Radiation Hardening :

No

FET Type :

P-Channel

Turn-Off Delay Time :

55 ns

Vgs (Max) :

±25V

Drain to Source Voltage (Vdss) :

30V

Vgs(th) (Max) @ Id :

2.4V @ 25μA

Configuration :

SINGLE WITH BUILT-IN DIODE

Packaging :

Tube

Input Capacitance (Ciss) (Max) @ Vds :

1110pF @ 25V

Number of Elements :

1

Rise Time :

44ns

Current - Continuous Drain (Id) @ 25°C :

9.2A Ta

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Gull wing

Drive Voltage (Max Rds On,Min Rds On) :

10V 20V

Length :

5mm

Series :

HEXFET®

Rds On (Max) @ Id, Vgs :

13.3m Ω @ 9.2A, 20V

Power Dissipation-Max :

2.5W Ta

Published :

2010

Gate Charge (Qg) (Max) @ Vgs :

38nC @ 10V

Transistor Application :

SWITCHING

Fall Time (Typ) :

49 ns

Pulsed Drain Current-Max (IDM) :

75A

Mounting Type :

Surface Mount

Drain to Source Breakdown Voltage :

-30V

RoHS Status :

ROHS3 Compliant

Number of Terminations :

8

Number of Pins :

8