IRF9392PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On Max :

12.1 mΩ

Mount :

Surface Mount

Published :

2007

Drain to Source Breakdown Voltage :

-30V

Number of Elements :

1

Rise Time :

47ns

Turn-Off Delay Time :

73 ns

Max Operating Temperature :

150°C

Vgs (Max) :

±25V

Supplier Device Package :

8-SO

Current - Continuous Drain (Id) @ 25°C :

9.8A Ta

Min Operating Temperature :

-55°C

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Drive Voltage (Max Rds On,Min Rds On) :

10V 20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

P-Channel

Radiation Hardening :

No

Input Capacitance (Ciss) (Max) @ Vds :

1270pF @ 25V

Power Dissipation :

2.5W

Packaging :

Tube

Turn On Delay Time :

15 ns

Vgs(th) (Max) @ Id :

2.4V @ 25μA

Number of Pins :

8

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Surface Mount

Continuous Drain Current (ID) :

9.8A

Input Capacitance :

1.27nF

Lead Free :

Lead Free

Fall Time (Typ) :

58 ns

Power Dissipation-Max :

2.5W Ta

Gate to Source Voltage (Vgs) :

25V

RoHS Status :

ROHS3 Compliant

Series :

HEXFET®

Gate Charge (Qg) (Max) @ Vgs :

14nC @ 4.5V

Drain to Source Voltage (Vdss) :

30V

Rds On (Max) @ Id, Vgs :

12.1mOhm @ 7.8A, 20V