IRF9388TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

10V 20V

Vgs(th) (Max) @ Id :

2.4V @ 25μA

Vgs (Max) :

±25V

Transistor Element Material :

SILICON

Width :

3.9878mm

Number of Elements :

1

JESD-609 Code :

e3

Factory Lead Time :

12 Weeks

Pulsed Drain Current-Max (IDM) :

96A

Rise Time :

57ns

REACH SVHC :

No SVHC

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Turn-Off Delay Time :

80 ns

Gate to Source Voltage (Vgs) :

25V

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Height :

1.4986mm

Series :

HEXFET®

Terminal Finish :

Matte Tin (Sn)

Radiation Hardening :

No

Input Capacitance (Ciss) (Max) @ Vds :

1680pF @ 25V

Number of Pins :

8

Element Configuration :

Single

Turn On Delay Time :

19 ns

Terminal Form :

Gull wing

Fall Time (Typ) :

66 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

52nC @ 10V

Continuous Drain Current (ID) :

12A

Published :

2005

Threshold Voltage :

-1.8V

FET Type :

P-Channel

Operating Temperature :

-55°C~150°C TJ

Power Dissipation-Max :

2.5W Ta

Terminal Position :

Dual

RoHS Status :

ROHS3 Compliant

Number of Terminations :

8

Transistor Application :

SWITCHING

Mount :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

12A Ta

Drain to Source Voltage (Vdss) :

30V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Power Dissipation :

2.5W

Rds On (Max) @ Id, Vgs :

8.5m Ω @ 12A, 20V

Drain to Source Breakdown Voltage :

-30V