IRF9388PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Turn-Off Delay Time :

80 ns

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

2.5W Ta

Vgs (Max) :

±25V

Rds On (Max) @ Id, Vgs :

8.5m Ω @ 12A, 20V

Continuous Drain Current (ID) :

12A

Drive Voltage (Max Rds On,Min Rds On) :

10V 20V

Terminal Position :

Dual

Drain to Source Voltage (Vdss) :

30V

Drain to Source Breakdown Voltage :

-30V

Length :

4.9784mm

Terminal Form :

Gull wing

Gate to Source Voltage (Vgs) :

25V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Turn On Delay Time :

19 ns

Power Dissipation :

2.5W

FET Type :

P-Channel

Mount :

Surface Mount

ECCN Code :

EAR99

Packaging :

Tube

Series :

HEXFET®

Operating Temperature :

-55°C~150°C TJ

Current - Continuous Drain (Id) @ 25°C :

12A Ta

Vgs(th) (Max) @ Id :

2.4V @ 25μA

Lead Free :

Lead Free

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

1680pF @ 25V

Number of Elements :

1

Rise Time :

57ns

Number of Pins :

8

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Configuration :

SINGLE WITH BUILT-IN DIODE

Gate Charge (Qg) (Max) @ Vgs :

52nC @ 10V

Fall Time (Typ) :

66 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2005

Mounting Type :

Surface Mount

Pulsed Drain Current-Max (IDM) :

96A

Radiation Hardening :

No

Number of Terminations :

8