IRF9383MTRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Turn-Off Delay Time :

115 ns

Number of Pins :

7

Case Connection :

DRAIN

Drain-source On Resistance-Max :

0.0029Ohm

Power Dissipation-Max :

2.1W Ta 113W Tc

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

2.9m Ω @ 22A, 10V

Factory Lead Time :

12 Weeks

JESD-30 Code :

R-XBCC-N3

Drain to Source Voltage (Vdss) :

30V

Configuration :

SINGLE WITH BUILT-IN DIODE

ECCN Code :

EAR99

Turn On Delay Time :

29 ns

Terminal Finish :

Matte Tin (Sn)

Gate Charge (Qg) (Max) @ Vgs :

130nC @ 10V

Number of Elements :

1

Terminal Position :

BOTTOM

Radiation Hardening :

No

Mount :

Surface Mount

Packaging :

Tape and Reel (TR)

Vgs (Max) :

±20V

Transistor Application :

SWITCHING

Number of Terminations :

3

Drain to Source Breakdown Voltage :

-30V

Lead Free :

Lead Free

JESD-609 Code :

e3

Rise Time :

160ns

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Fall Time (Typ) :

110 ns

Continuous Drain Current (ID) :

22A

Operating Temperature :

-40°C~150°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

7305pF @ 15V

Package / Case :

DirectFET™ Isometric MX

Current - Continuous Drain (Id) @ 25°C :

22A Ta 160A Tc

FET Type :

P-Channel

Power Dissipation :

2.1W

Published :

2011

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

2.4V @ 150μA

Series :

HEXFET®

Gate to Source Voltage (Vgs) :

20V