IRF9383MTR1PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Resistance :

3.8mOhm

Mount :

Surface Mount

Mounting Type :

Surface Mount

Number of Elements :

1

Gate to Source Voltage (Vgs) :

20V

Fall Time (Typ) :

110 ns

Current - Continuous Drain (Id) @ 25°C :

22A Ta 160A Tc

Packaging :

Tape and Reel (TR)

Max Operating Temperature :

150°C

Element Configuration :

Dual

Supplier Device Package :

DIRECTFET™ MX

Input Capacitance (Ciss) (Max) @ Vds :

7305pF @ 15V

Input Capacitance :

7.305nF

Published :

2013

RoHS Status :

RoHS Compliant

Series :

HEXFET®

Package / Case :

DirectFET™ Isometric MX

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Turn-Off Delay Time :

115 ns

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Breakdown Voltage :

-30V

Continuous Drain Current (ID) :

22A

Rds On (Max) @ Id, Vgs :

2.9mOhm @ 22A, 10V

Operating Temperature :

-40°C~150°C TJ

FET Type :

P-Channel

Min Operating Temperature :

-40°C

Gate Charge (Qg) (Max) @ Vgs :

130nC @ 10V

Power Dissipation :

2.1W

Rise Time :

160ns

Rds On Max :

2.9 mΩ

Number of Pins :

7

Vgs (Max) :

±20V

Drain to Source Voltage (Vdss) :

30V

Resistance :

2.9mOhm

Vgs(th) (Max) @ Id :

2.4V @ 150μA

Radiation Hardening :

No

Power Dissipation-Max :

2.1W Ta 113W Tc