IRF9335PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

5.4A Ta

Width :

3.99mm

REACH SVHC :

No SVHC

ECCN Code :

EAR99

Recovery Time :

21 ns

Element Configuration :

Single

Rds On (Max) @ Id, Vgs :

59m Ω @ 5.4A, 10V

Power Dissipation :

2.5W

Vgs(th) (Max) @ Id :

2.4V @ 10μA

Series :

HEXFET®

Drain to Source Breakdown Voltage :

-30V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Published :

2004

Power Dissipation-Max :

2.5W Ta

Height :

1.57mm

Turn-Off Delay Time :

16 ns

Fall Time (Typ) :

15 ns

Rise Time :

19ns

Pulsed Drain Current-Max (IDM) :

43A

Number of Terminations :

8

Terminal Position :

Dual

Terminal Form :

Gull wing

Number of Pins :

8

Threshold Voltage :

-1.8V

Packaging :

Tube

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

386pF @ 25V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Continuous Drain Current (ID) :

-5.4A

Drain-source On Resistance-Max :

0.059Ohm

Radiation Hardening :

No

Vgs (Max) :

±20V

Mounting Type :

Surface Mount

JEDEC-95 Code :

MS-012AA

Turn On Delay Time :

9.7 ns

Mount :

Surface Mount

Nominal Vgs :

-1.8 V

FET Type :

P-Channel

Length :

4.98mm

Gate Charge (Qg) (Max) @ Vgs :

14nC @ 10V

Operating Temperature :

-55°C~150°C TJ

Gate to Source Voltage (Vgs) :

20V

Number of Elements :

1

Drain to Source Voltage (Vdss) :

30V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Operating Mode :

ENHANCEMENT MODE