IRF9335PBF

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

Mount :

Surface Mount

Transistor Element Material :

SILICON

Nominal Vgs :

-1.8 V

REACH SVHC :

No SVHC

FET Type :

P-Channel

Drain to Source Voltage (Vdss) :

30V

Current - Continuous Drain (Id) @ 25°C :

5.4A Ta

Gate Charge (Qg) (Max) @ Vgs :

14nC @ 10V

Rds On (Max) @ Id, Vgs :

59m Ω @ 5.4A, 10V

Transistor Application :

SWITCHING

Width :

3.99mm

Length :

4.98mm

JEDEC-95 Code :

MS-012AA

Drain-source On Resistance-Max :

0.059Ohm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

8

Drain to Source Breakdown Voltage :

-30V

Turn On Delay Time :

9.7 ns

Published :

2004

Vgs (Max) :

±20V

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

Series :

HEXFET®

Number of Pins :

8

Number of Elements :

1

Height :

1.57mm

Radiation Hardening :

No

Turn-Off Delay Time :

16 ns

Pulsed Drain Current-Max (IDM) :

43A

Element Configuration :

Single

Terminal Form :

Gull wing

Continuous Drain Current (ID) :

-5.4A

ECCN Code :

EAR99

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Packaging :

Tube

Recovery Time :

21 ns

Rise Time :

19ns

Power Dissipation :

2.5W

Threshold Voltage :

-1.8V

Terminal Position :

Dual

Gate to Source Voltage (Vgs) :

20V

Input Capacitance (Ciss) (Max) @ Vds :

386pF @ 25V

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

2.5W Ta

Vgs(th) (Max) @ Id :

2.4V @ 10μA

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Fall Time (Typ) :

15 ns

Operating Temperature :

-55°C~150°C TJ