IRF9333PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

1110pF @ 25V

Terminal Position :

Dual

Power Dissipation-Max :

2.5W Ta

Fall Time (Typ) :

49 ns

Rds On (Max) @ Id, Vgs :

19.4m Ω @ 9.2A, 10V

Pulsed Drain Current-Max (IDM) :

75A

FET Type :

P-Channel

ECCN Code :

EAR99

Number of Channels :

1

Mounting Type :

Surface Mount

Continuous Drain Current (ID) :

-9.2A

Number of Pins :

8

Vgs (Max) :

±20V

Transistor Element Material :

SILICON

Turn On Delay Time :

16 ns

Current - Continuous Drain (Id) @ 25°C :

9.2A Ta

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Width :

3.9878mm

Series :

HEXFET®

Gate Charge (Qg) (Max) @ Vgs :

38nC @ 10V

Height :

1.75mm

Drain to Source Breakdown Voltage :

-30V

Element Configuration :

Single

Turn-Off Delay Time :

55 ns

Drain to Source Voltage (Vdss) :

30V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Max Junction Temperature (Tj) :

150°C

Power Dissipation :

2.5W

Recovery Time :

36 ns

Gate to Source Voltage (Vgs) :

20V

Radiation Hardening :

No

Threshold Voltage :

-1.8V

Nominal Vgs :

-1.8 V

Operating Temperature :

-55°C~150°C TJ

Packaging :

Tube

Length :

4.9784mm

Rise Time :

44ns

REACH SVHC :

No SVHC

Number of Elements :

1

Terminal Form :

Gull wing

Mount :

Surface Mount

RoHS Status :

ROHS3 Compliant

Number of Terminations :

8

Published :

2010

Vgs(th) (Max) @ Id :

2.4V @ 25μA

Transistor Application :

SWITCHING