IRF9332TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Power Dissipation :

2.5W

Terminal Position :

Dual

Fall Time (Typ) :

58 ns

RoHS Status :

ROHS3 Compliant

Vgs (Max) :

±20V

Power Dissipation-Max :

2.5W Ta

Turn On Delay Time :

15 ns

Rds On (Max) @ Id, Vgs :

17.5m Ω @ 9.8A, 10V

Factory Lead Time :

12 Weeks

Radiation Hardening :

No

Vgs(th) (Max) @ Id :

2.4V @ 25μA

Published :

2010

Continuous Drain Current (ID) :

9.8A

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Rise Time :

47ns

JESD-609 Code :

e3

Number of Terminations :

8

Mount :

Surface Mount

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Drain to Source Voltage (Vdss) :

30V

Terminal Finish :

Matte Tin (Sn)

ECCN Code :

EAR99

Turn-Off Delay Time :

73 ns

Current - Continuous Drain (Id) @ 25°C :

9.8A Ta

Number of Pins :

8

Packaging :

Tape and Reel (TR)

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Gate to Source Voltage (Vgs) :

20V

Series :

HEXFET®

Terminal Form :

Gull wing

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

P-Channel

Gate Charge (Qg) (Max) @ Vgs :

41nC @ 10V

Drain to Source Breakdown Voltage :

-30V

Input Capacitance (Ciss) (Max) @ Vds :

1270pF @ 25V