IRF3707Z

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Input Capacitance (Ciss) (Max) @ Vds :

1210pF @ 15V

Pulsed Drain Current-Max (IDM) :

230A

JESD-609 Code :

e3

Avalanche Energy Rating (Eas) :

40 mJ

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

9.5m Ω @ 21A, 10V

Packaging :

Tube

Terminal Position :

Single

Peak Reflow Temperature (Cel) :

260

DS Breakdown Voltage-Min :

30V

Operating Temperature :

-55°C~175°C TJ

RoHS Status :

Non-RoHS Compliant

FET Type :

N-Channel

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Element Material :

SILICON

Drain to Source Voltage (Vdss) :

30V

Package / Case :

TO-220-3

Vgs (Max) :

±20V

Power Dissipation-Max :

57W Tc

Number of Elements :

1

Drain Current-Max (Abs) (ID) :

42A

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

ECCN Code :

EAR99

Series :

HEXFET®

JESD-30 Code :

R-PSSO-G2

Terminal Form :

Gull wing

Number of Terminations :

2

Published :

2003

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 4.5V

Transistor Application :

SWITCHING

Surface Mount :

yes

Time@Peak Reflow Temperature-Max (s) :

30

Vgs(th) (Max) @ Id :

2.25V @ 250μA

Qualification Status :

Not Qualified

Current - Continuous Drain (Id) @ 25°C :

59A Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Case Connection :

DRAIN

Drain-source On Resistance-Max :

0.0095Ohm

Mounting Type :

Through Hole