IRF1902TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

700mV @ 250μA

FET Type :

N-Channel

Supplier Device Package :

8-SO

Input Capacitance (Ciss) (Max) @ Vds :

310pF @ 15V

Gate to Source Voltage (Vgs) :

12V

Min Operating Temperature :

-55°C

Drain to Source Voltage (Vdss) :

20V

Packaging :

Tape and Reel (TR)

Max Operating Temperature :

150°C

Drain to Source Breakdown Voltage :

20V

Continuous Drain Current (ID) :

4.2A

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Series :

HEXFET®

Rds On (Max) @ Id, Vgs :

85mOhm @ 4A, 4.5V

Power Dissipation-Max :

2.5W Ta

Input Capacitance :

310pF

Number of Elements :

1

Rds On Max :

85 mΩ

Published :

2004

Mounting Type :

Surface Mount

RoHS Status :

RoHS Compliant

Drive Voltage (Max Rds On,Min Rds On) :

2.7V 4.5V

Current - Continuous Drain (Id) @ 25°C :

4.2A Ta

Power Dissipation :

2.5W

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

7.5nC @ 4.5V

Drain to Source Resistance :

85mOhm

Vgs (Max) :

±12V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

8

Mount :

Surface Mount