IRF1902PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Voltage - Rated DC :

20V

Vgs(th) (Max) @ Id :

700mV @ 250μA

Turn-Off Delay Time :

23 ns

Number of Elements :

1

Published :

2004

Current - Continuous Drain (Id) @ 25°C :

4.2A Ta

Rise Time :

13ns

Vgs (Max) :

±12V

Power Dissipation :

2.5W

Mounting Type :

Surface Mount

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

8

Drain to Source Breakdown Voltage :

20V

Input Capacitance :

310pF

Width :

3.9878mm

Turn On Delay Time :

5.9 ns

Current Rating :

4.2A

Drain to Source Resistance :

85mOhm

Gate Charge (Qg) (Max) @ Vgs :

7.5nC @ 4.5V

Height :

1.4986mm

Radiation Hardening :

No

Fall Time (Typ) :

19 ns

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

85mOhm @ 4A, 4.5V

RoHS Status :

RoHS Compliant

Series :

HEXFET®

Rds On Max :

85 mΩ

Drive Voltage (Max Rds On,Min Rds On) :

2.7V 4.5V

Min Operating Temperature :

-55°C

Power Dissipation-Max :

2.5W Ta

Continuous Drain Current (ID) :

4A

Input Capacitance (Ciss) (Max) @ Vds :

310pF @ 15V

Supplier Device Package :

8-SO

Operating Temperature :

-55°C~150°C TJ

Mount :

Surface Mount

Packaging :

Tube

Drain to Source Voltage (Vdss) :

20V

Gate to Source Voltage (Vgs) :

12V

Max Operating Temperature :

150°C

Length :

4.9784mm