IRF1902GTRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Max Power Dissipation :

2.5W

Vgs(th) (Max) @ Id :

700mV @ 250μA

Rds On (Max) @ Id, Vgs :

85mOhm @ 4A, 4.5V

Rise Time :

13ns

Gate to Source Voltage (Vgs) :

12V

Turn On Delay Time :

5.9 ns

Mount :

Surface Mount

Continuous Drain Current (ID) :

4.2A

Gate Charge (Qg) (Max) @ Vgs :

7.5nC @ 4.5V

Input Capacitance :

310pF

Input Capacitance (Ciss) (Max) @ Vds :

310pF @ 15V

Mounting Type :

Surface Mount

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Resistance :

85mOhm

Length :

4.9784mm

Packaging :

Tape and Reel (TR)

Turn-Off Delay Time :

23 ns

Fall Time (Typ) :

19 ns

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Power Dissipation :

2.5W

Max Operating Temperature :

150°C

RoHS Status :

RoHS Compliant

Drain to Source Breakdown Voltage :

20V

Number of Pins :

8

Drain to Source Voltage (Vdss) :

20V

Width :

3.9878mm

Series :

HEXFET®

Min Operating Temperature :

-55°C

Rds On Max :

85 mΩ

Supplier Device Package :

8-SO

Element Configuration :

Single

Published :

2014

Current - Continuous Drain (Id) @ 25°C :

4.2A Ta

Operating Temperature :

-55°C~150°C TJ