IRF1902GPBF

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Mfr.Part #
IRF1902GPBF
Manufacturer
Infineon Technologies
Package / Case
8-SOIC (0.154, 3.90mm Width)
Datasheet
Download
Description
MOSFET N-CH 20V 4.2A 8SO
Stock
45,170
In Stock :
45,170

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
Rise Time :
13ns
Vgs(th) (Max) @ Id :
700mV @ 250μA
Mounting Type :
Surface Mount
Drain to Source Resistance :
85mOhm
Operating Temperature :
-55°C~150°C TJ
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Power Dissipation :
2.5W
Packaging :
Tube
Max Operating Temperature :
150°C
Series :
HEXFET®
Package / Case :
8-SOIC (0.154, 3.90mm Width)
Max Power Dissipation :
2.5W
Min Operating Temperature :
-55°C
Input Capacitance :
310pF
Width :
3.9878mm
Gate to Source Voltage (Vgs) :
12V
Gate Charge (Qg) (Max) @ Vgs :
7.5nC @ 4.5V
Mount :
Surface Mount
Number of Pins :
8
Continuous Drain Current (ID) :
4.2A
RoHS Status :
RoHS Compliant
FET Type :
N-Channel
Drain to Source Voltage (Vdss) :
20V
Published :
2014
Supplier Device Package :
8-SO
Rds On Max :
85 mΩ
Height :
1.4986mm
Fall Time (Typ) :
19 ns
Turn On Delay Time :
5.9 ns
Turn-Off Delay Time :
23 ns
Drain to Source Breakdown Voltage :
20V
Current - Continuous Drain (Id) @ 25°C :
4.2A Ta
Rds On (Max) @ Id, Vgs :
85mOhm @ 4A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds :
310pF @ 15V
Datasheets
IRF1902GPBF
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies IRF1902GPBF from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Operating Temperature:-55°C~150°C TJ, Package / Case:8-SOIC (0.154, 3.90mm Width), Number of Pins:8, IRF1902GPBF pinout, IRF1902GPBF datasheet PDF, IRF1902GPBF amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies IRF1902GPBF ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies IRF1902GPBF


N-Channel Tube 85mOhm @ 4A, 4.5V 310pF @ 15V 7.5nC @ 4.5V 20V 8-SOIC (0.154, 3.90mm Width)

IRF1902GPBF Overview


Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 310pF @ 15V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 4.2A amps.In this device, the drain-source breakdown voltage is 20V and VGS=20V, so the drain-source breakdown voltage is 20V in this case.It is [23 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.Single MOSFETs transistor is the resistance between the drain and source of a MOSFET when the gate-to-source voltage (VGS) is applied to bias the device to the on state, and Single MOSFETs transistor is 85mOhm.A turn-on delay time of 5.9 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 12V.To operate this transistor, you will need a 20V drain to source voltage (Vdss).

IRF1902GPBF Features


a continuous drain current (ID) of 4.2A
a drain-to-source breakdown voltage of 20V voltage
the turn-off delay time is 23 ns
single MOSFETs transistor is 85mOhm
a 20V drain to source voltage (Vdss)


IRF1902GPBF Applications


There are a lot of Infineon Technologies
IRF1902GPBF applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
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