IRF1704

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs :

260nC @ 10V

Surface Mount :

No

Drain to Source Voltage (Vdss) :

40V

Input Capacitance (Ciss) (Max) @ Vds :

6950pF @ 25V

Qualification Status :

Not Qualified

Vgs (Max) :

±20V

Published :

2002

Number of Elements :

1

DS Breakdown Voltage-Min :

40V

Number of Terminations :

3

FET Type :

N-Channel

Pulsed Drain Current-Max (IDM) :

680A

RoHS Status :

Non-RoHS Compliant

Operating Temperature :

-55°C~200°C TJ

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

4m Ω @ 100A, 10V

Current - Continuous Drain (Id) @ 25°C :

170A Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-30 Code :

R-PSFM-T3

Peak Reflow Temperature (Cel) :

260

JEDEC-95 Code :

TO-220AB

Transistor Application :

SWITCHING

Time@Peak Reflow Temperature-Max (s) :

40

JESD-609 Code :

e3

Terminal Finish :

MATTE TIN OVER NICKEL

Terminal Position :

Single

Package / Case :

TO-220-3

Packaging :

Tube

Transistor Element Material :

SILICON

Power Dissipation-Max :

230W Tc

Avalanche Energy Rating (Eas) :

670 mJ

Mounting Type :

Through Hole

Drain Current-Max (Abs) (ID) :

75A

Case Connection :

DRAIN

Drain-source On Resistance-Max :

0.004ohm

Drive Voltage (Max Rds On,Min Rds On) :

10V

ECCN Code :

EAR99

Series :

HEXFET®

Configuration :

SINGLE WITH BUILT-IN DIODE