IRF1607PBF
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- Mfr.Part #
- IRF1607PBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 75V 142A TO220AB
- Stock
- 3,622
- In Stock ：
- 3,622
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Lead Free :
- Lead Free
- Additional Feature :
- AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
- Width :
- 4.826mm
- REACH SVHC :
- No SVHC
- Number of Terminations :
- 3
- Dual Supply Voltage :
- 75V
- Gate Charge (Qg) (Max) @ Vgs :
- 320nC @ 10V
- Rds On (Max) @ Id, Vgs :
- 7.5m Ω @ 85A, 10V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Gate to Source Voltage (Vgs) :
- 20V
- Current - Continuous Drain (Id) @ 25°C :
- 142A Tc
- Rise Time :
- 130ns
- Drain to Source Breakdown Voltage :
- 75V
- JEDEC-95 Code :
- TO-220AB
- Fall Time (Typ) :
- 86 ns
- Number of Pins :
- 3
- Package / Case :
- TO-220-3
- RoHS Status :
- ROHS3 Compliant
- Factory Lead Time :
- 12 Weeks
- Drain Current-Max (Abs) (ID) :
- 75A
- Transistor Element Material :
- SILICON
- Resistance :
- 7.5Ohm
- Power Dissipation-Max :
- 380W Tc
- Vgs (Max) :
- ±20V
- Mount :
- Through Hole
- Height :
- 16.51mm
- Series :
- HEXFET®
- Case Connection :
- DRAIN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Published :
- 2001
- Turn On Delay Time :
- 22 ns
- FET Type :
- N-Channel
- Power Dissipation :
- 380W
- Transistor Application :
- SWITCHING
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Operating Mode :
- ENHANCEMENT MODE
- Radiation Hardening :
- No
- Number of Elements :
- 1
- Element Configuration :
- Single
- Mounting Type :
- Through Hole
- Operating Temperature :
- -55°C~175°C TJ
- Length :
- 10.668mm
- Input Capacitance (Ciss) (Max) @ Vds :
- 7750pF @ 25V
- Packaging :
- Tube
- Nominal Vgs :
- 4 V
- Current Rating :
- 142A
- Voltage - Rated DC :
- 75V
- Turn-Off Delay Time :
- 84 ns
- Continuous Drain Current (ID) :
- 142A
- ECCN Code :
- EAR99
- Pulsed Drain Current-Max (IDM) :
- 570A
- Datasheets
- IRF1607PBF
N-Channel Tube 7.5m Ω @ 85A, 10V ±20V 7750pF @ 25V 320nC @ 10V TO-220-3
IRF1607PBF Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 7750pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 142A amps.In this device, the drain-source breakdown voltage is 75V and VGS=75V, so the drain-source breakdown voltage is 75V in this case.A device can conduct a maximum continuous current of [75A] according to its drain current.It is [84 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 570A.A turn-on delay time of 22 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.A device like this reduces its overall power consumption when it uses drive voltage (10V).
IRF1607PBF Features
a continuous drain current (ID) of 142A
a drain-to-source breakdown voltage of 75V voltage
the turn-off delay time is 84 ns
based on its rated peak drain current 570A.
IRF1607PBF Applications
There are a lot of Infineon Technologies
IRF1607PBF applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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