IRF150P221XKMA1
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- Mfr.Part #
- IRF150P221XKMA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 150V 186A TO247-3
- Stock
- 20,701
- In Stock ：
- 20,701
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 100nC @ 10V
- Packaging :
- Tube
- Series :
- StrongIRFET™
- Operating Temperature :
- -55°C~175°C TJ
- Input Capacitance (Ciss) (Max) @ Vds :
- 6000pF @ 75V
- Vgs (Max) :
- ±20V
- RoHS Status :
- ROHS3 Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- FET Type :
- N-Channel
- Drain to Source Voltage (Vdss) :
- 150V
- Vgs(th) (Max) @ Id :
- 4.6V @ 264μA
- Mounting Type :
- Through Hole
- Current - Continuous Drain (Id) @ 25°C :
- 186A
- Power Dissipation-Max :
- 341W Tc
- Rds On (Max) @ Id, Vgs :
- 4.5m Ω @ 100A, 10V
- Package / Case :
- TO-247-3
- Datasheets
- IRF150P221XKMA1
N-Channel Tube 4.5m Ω @ 100A, 10V ±20V 6000pF @ 75V 100nC @ 10V 150V TO-247-3
IRF150P221XKMA1 Description
IRF150P221XKMA1 is an N-channel Power MOSFET transistor from the manufacturer Infineon Technologies with a Drain to Source Voltage (Vdss) of 150V. The operating temperature of IRF150P221XKMA1 is -55??C~175??C TJ and its maximum power dissipation is 341W Tc. IRF150P221XKMA1 has 3 pins and it is available in Tube packaging way.
IRF150P221XKMA1 Features
-
Very low RDS(on)
-
Excellent gate charge xRDS(on)(FOM)
-
Optimized Qrr
-
175??C operating temperature
-
Product validation according to JEDEC standard
-
Optimized for broadest availability from distribution partners
IRF150P221XKMA1 Applications
-
Reduced conduction losses
-
Ideal for high switching frequency
-
Lower over shoot voltage
-
Increasedreliabilityversus150??Cratedparts
-
Halogen-free according to IEC61249-2-21
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