IRF1503STRLPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain to Source Voltage (Vdss) :

30V

Qualification Status :

Not Qualified

Terminal Form :

Gull wing

Mounting Type :

Surface Mount

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE

Vgs (Max) :

±20V

RoHS Status :

ROHS3 Compliant

Number of Terminations :

2

Surface Mount :

yes

JESD-609 Code :

e3

Published :

2010

Rds On (Max) @ Id, Vgs :

3.3m Ω @ 140A, 10V

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Single

Number of Elements :

1

Pulsed Drain Current-Max (IDM) :

960A

JESD-30 Code :

R-PSSO-G2

Case Connection :

DRAIN

Packaging :

Tape and Reel (TR)

Series :

HEXFET®

Peak Reflow Temperature (Cel) :

260

Transistor Application :

SWITCHING

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

ECCN Code :

EAR99

FET Type :

N-Channel

Operating Temperature :

-55°C~175°C TJ

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Gate Charge (Qg) (Max) @ Vgs :

200nC @ 10V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Operating Mode :

ENHANCEMENT MODE

DS Breakdown Voltage-Min :

30V

Factory Lead Time :

12 Weeks

Drain-source On Resistance-Max :

0.0033Ohm

Power Dissipation-Max :

200W Tc

Vgs(th) (Max) @ Id :

4V @ 250µA

Input Capacitance (Ciss) (Max) @ Vds :

5730pF @ 25V

Configuration :

SINGLE WITH BUILT-IN DIODE

Avalanche Energy Rating (Eas) :

510 mJ

Time@Peak Reflow Temperature-Max (s) :

30

Drain Current-Max (Abs) (ID) :

75A