IRF1503SPBF
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- Mfr.Part #
- IRF1503SPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 75A D2PAK
- Stock
- 15,461
- In Stock ：
- 15,461
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Nominal Vgs :
- 4 V
- Vgs (Max) :
- ±20V
- Series :
- HEXFET®
- Current - Continuous Drain (Id) @ 25°C :
- 75A Tc
- RoHS Status :
- ROHS3 Compliant
- Continuous Drain Current (ID) :
- 75A
- Width :
- 9.65mm
- Rds On (Max) @ Id, Vgs :
- 3.3m Ω @ 140A, 10V
- Published :
- 2010
- Rise Time :
- 130ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Gate to Source Voltage (Vgs) :
- 20V
- Forward Voltage :
- 1.3V
- Turn On Delay Time :
- 17 ns
- Mount :
- Surface Mount
- Resistance :
- 3.3MOhm
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Mounting Type :
- Surface Mount
- Radiation Hardening :
- No
- Gate Charge (Qg) (Max) @ Vgs :
- 200nC @ 10V
- Fall Time (Typ) :
- 48 ns
- Factory Lead Time :
- 14 Weeks
- Power Dissipation-Max :
- 200W Tc
- FET Type :
- N-Channel
- Power Dissipation :
- 200W
- Element Configuration :
- Single
- Voltage - Rated DC :
- 30V
- Length :
- 10.668mm
- Number of Pins :
- 3
- Packaging :
- Tube
- Lead Free :
- Lead Free
- ECCN Code :
- EAR99
- Input Capacitance (Ciss) (Max) @ Vds :
- 5730pF @ 25V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current Rating :
- 75A
- Operating Temperature :
- -55°C~175°C TJ
- Drain to Source Breakdown Voltage :
- 30V
- Height :
- 4.826mm
- Number of Elements :
- 1
- Turn-Off Delay Time :
- 59 ns
- REACH SVHC :
- No SVHC
- Datasheets
- IRF1503SPBF
N-Channel Tube 3.3m Ω @ 140A, 10V ±20V 5730pF @ 25V 200nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRF1503SPBF Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 5730pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 75A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=30V. And this device has 30V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 59 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 17 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.By using drive voltage (10V), this device helps reduce its overall power consumption.
IRF1503SPBF Features
a continuous drain current (ID) of 75A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 59 ns
IRF1503SPBF Applications
There are a lot of Infineon Technologies
IRF1503SPBF applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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