IRF1503PBF
- Mfr.Part #
- IRF1503PBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 75A TO220AB
- Stock
- 74,688
- In Stock :
- 74,688
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Operating Temperature :
- -55°C~175°C TJ
- Gate to Source Voltage (Vgs) :
- 20V
- Gate Charge (Qg) (Max) @ Vgs :
- 200nC @ 10V
- REACH SVHC :
- No SVHC
- Power Dissipation :
- 330W
- Transistor Application :
- SWITCHING
- Radiation Hardening :
- No
- Transistor Element Material :
- SILICON
- Current - Continuous Drain (Id) @ 25°C :
- 75A Tc
- Width :
- 4.826mm
- Series :
- HEXFET®
- Rds On (Max) @ Id, Vgs :
- 3.3m Ω @ 140A, 10V
- Pulsed Drain Current-Max (IDM) :
- 960A
- Mounting Type :
- Through Hole
- Element Configuration :
- Single
- Power Dissipation-Max :
- 330W Tc
- Case Connection :
- DRAIN
- Avalanche Energy Rating (Eas) :
- 980 mJ
- Rise Time :
- 130ns
- Packaging :
- Tube
- Height :
- 16.51mm
- FET Type :
- N-Channel
- Factory Lead Time :
- 12 Weeks
- Current Rating :
- 75A
- Drain to Source Breakdown Voltage :
- 30V
- Lead Free :
- Lead Free
- Mount :
- Through Hole
- Turn On Delay Time :
- 17 ns
- Vgs (Max) :
- ±20V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Continuous Drain Current (ID) :
- 75A
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Nominal Vgs :
- 4 V
- Additional Feature :
- AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
- Fall Time (Typ) :
- 48 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Published :
- 2002
- JEDEC-95 Code :
- TO-220AB
- RoHS Status :
- ROHS3 Compliant
- Length :
- 10.668mm
- Threshold Voltage :
- 4V
- Number of Pins :
- 3
- Voltage - Rated DC :
- 30V
- Number of Elements :
- 1
- Operating Mode :
- ENHANCEMENT MODE
- Number of Terminations :
- 3
- ECCN Code :
- EAR99
- Turn-Off Delay Time :
- 59 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 5730pF @ 25V
- Package / Case :
- TO-220-3
- Datasheets
- IRF1503PBF

N-Channel Tube 3.3m Ω @ 140A, 10V ±20V 5730pF @ 25V 200nC @ 10V TO-220-3
IRF1503PBF Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 980 mJ.A device's maximal input capacitance is 5730pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 75A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 30V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 59 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 960A, which is its maximum rated peak drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 17 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a 4V threshold voltage.This device reduces its overall power consumption by using drive voltage (10V).
IRF1503PBF Features
the avalanche energy rating (Eas) is 980 mJ
a continuous drain current (ID) of 75A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 59 ns
based on its rated peak drain current 960A.
a threshold voltage of 4V
IRF1503PBF Applications
There are a lot of Infineon Technologies
IRF1503PBF applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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