IRF1407STRRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Gate to Source Voltage (Vgs) :

20V

Rds On (Max) @ Id, Vgs :

7.8m Ω @ 78A, 10V

Operating Mode :

ENHANCEMENT MODE

Case Connection :

DRAIN

Continuous Drain Current (ID) :

100A

Power Dissipation :

200W

Published :

2004

Drain Current-Max (Abs) (ID) :

75A

Peak Reflow Temperature (Cel) :

260

JESD-30 Code :

R-PSSO-G2

Length :

10.668mm

Series :

HEXFET®

Vgs (Max) :

±20V

Mounting Type :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

5600pF @ 25V

Power Dissipation-Max :

3.8W Ta 200W Tc

Turn-Off Delay Time :

150 ns

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

4V @ 250µA

Packaging :

Tape and Reel (TR)

Pulsed Drain Current-Max (IDM) :

520A

Drain-source On Resistance-Max :

0.0078Ohm

Operating Temperature :

-55°C~175°C TJ

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Terminal Position :

Single

Number of Terminations :

2

Additional Feature :

HIGH RELIABILITY, ULTRA LOW RESISTANCE

Transistor Element Material :

SILICON

Mount :

Surface Mount

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rise Time :

150ns

RoHS Status :

ROHS3 Compliant

Radiation Hardening :

No

Turn On Delay Time :

11 ns

Height :

4.826mm

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Gate Charge (Qg) (Max) @ Vgs :

250nC @ 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain to Source Breakdown Voltage :

75V

JESD-609 Code :

e3

Lead Free :

Lead Free

Terminal Form :

Gull wing

Transistor Application :

SWITCHING

Time@Peak Reflow Temperature-Max (s) :

30

ECCN Code :

EAR99

Number of Pins :

3

Fall Time (Typ) :

140 ns