IRF1407STRLPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tape and Reel (TR)

Termination :

SMD/SMT

Dual Supply Voltage :

75V

RoHS Status :

ROHS3 Compliant

REACH SVHC :

No SVHC

Operating Mode :

ENHANCEMENT MODE

Length :

10.668mm

Power Dissipation-Max :

3.8W Ta 200W Tc

Height :

4.826mm

Factory Lead Time :

12 Weeks

Power Dissipation :

3.8W

ECCN Code :

EAR99

Drive Voltage (Max Rds On,Min Rds On) :

10V

Case Connection :

DRAIN

Rise Time :

150ns

Time@Peak Reflow Temperature-Max (s) :

30

Turn On Delay Time :

11 ns

Gate Charge (Qg) (Max) @ Vgs :

250nC @ 10V

Vgs(th) (Max) @ Id :

4V @ 250µA

Mount :

Surface Mount

JESD-30 Code :

R-PSSO-G2

Transistor Application :

SWITCHING

Lead Free :

Lead Free

Peak Reflow Temperature (Cel) :

260

Fall Time (Typ) :

140 ns

Configuration :

SINGLE WITH BUILT-IN DIODE

Rds On (Max) @ Id, Vgs :

7.8m Ω @ 78A, 10V

Terminal Form :

Gull wing

Input Capacitance (Ciss) (Max) @ Vds :

5600pF @ 25V

Pulsed Drain Current-Max (IDM) :

520A

FET Type :

N-Channel

Number of Pins :

3

Mounting Type :

Surface Mount

Operating Temperature :

-55°C~175°C TJ

Continuous Drain Current (ID) :

100A

Number of Terminations :

2

Published :

2004

Threshold Voltage :

4V

Terminal Position :

Single

Additional Feature :

HIGH RELIABILITY, ULTRA LOW RESISTANCE

Nominal Vgs :

4 V

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Gate to Source Voltage (Vgs) :

20V

Number of Elements :

1

Drain Current-Max (Abs) (ID) :

75A

Turn-Off Delay Time :

150 ns

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Drain to Source Breakdown Voltage :

75V

Vgs (Max) :

±20V

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Resistance :

7.8mOhm

Series :

HEXFET®

Width :

9.65mm

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB