IRF1407PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

Mounting Type :

Through Hole

Width :

4.826mm

REACH SVHC :

No SVHC

Length :

10.668mm

Drain to Source Voltage (Vdss) :

75V

Min Operating Temperature :

-55°C

Max Operating Temperature :

175°C

Continuous Drain Current (ID) :

130A

Number of Elements :

1

Vgs (Max) :

±20V

Height :

16.51mm

Number of Pins :

3

Rds On (Max) @ Id, Vgs :

7.8mOhm @ 78A, 10V

Threshold Voltage :

4V

Turn-Off Delay Time :

150 ns

Turn On Delay Time :

11 ns

Series :

HEXFET®

Voltage - Rated DC :

75V

Power Dissipation-Max :

330W Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Resistance :

7.8Ohm

Input Capacitance (Ciss) (Max) @ Vds :

5600pF @ 25V

FET Type :

N-Channel

Package / Case :

TO-220-3

Factory Lead Time :

12 Weeks

Element Configuration :

Single

Mount :

Through Hole

Current - Continuous Drain (Id) @ 25°C :

130A Tc

Drain to Source Breakdown Voltage :

75V

Lead Free :

Lead Free

Drain to Source Resistance :

7.8mOhm

Gate to Source Voltage (Vgs) :

20V

Current Rating :

130A

Nominal Vgs :

4 V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Radiation Hardening :

No

Rds On Max :

7.8 mΩ

Published :

2001

Input Capacitance :

5.6nF

Gate Charge (Qg) (Max) @ Vgs :

250nC @ 10V

Vgs(th) (Max) @ Id :

4V @ 250µA

Dual Supply Voltage :

75V

Supplier Device Package :

TO-220AB

Power Dissipation :

330W

Operating Temperature :

-55°C~175°C TJ

Packaging :

Tube

Fall Time (Typ) :

140 ns