IRF1405ZSTRRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

2010

Width :

9.65mm

Drain to Source Breakdown Voltage :

55V

Radiation Hardening :

No

Operating Temperature :

-55°C~175°C TJ

Packaging :

Tape and Reel (TR)

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Turn On Delay Time :

18 ns

Vgs(th) (Max) @ Id :

4V @ 250µA

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mount :

Surface Mount

Series :

HEXFET®

Max Operating Temperature :

175°C

Mounting Type :

Surface Mount

Turn-Off Delay Time :

48 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Min Operating Temperature :

-55°C

Continuous Drain Current (ID) :

75A

Input Capacitance :

4.78nF

Drain to Source Resistance :

4.9mOhm

Input Capacitance (Ciss) (Max) @ Vds :

4780pF @ 25V

Supplier Device Package :

D2PAK

Power Dissipation-Max :

230W Tc

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

RoHS Status :

RoHS Compliant

Gate to Source Voltage (Vgs) :

20V

Drain to Source Voltage (Vdss) :

55V

Number of Pins :

7

Rds On (Max) @ Id, Vgs :

4.9mOhm @ 75A, 10V

Vgs (Max) :

±20V

Fall Time (Typ) :

82 ns

Power Dissipation :

230W

Height :

4.826mm

Number of Elements :

1

Rise Time :

110ns

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

180nC @ 10V

Rds On Max :

4.9 mΩ