IRF1405ZSTRL-7P

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

TO-263-7, D2Pak (6 Leads + Tab), TO-263CB

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Form :

Gull wing

Packaging :

Tape and Reel (TR)

Drain-source On Resistance-Max :

0.0049Ohm

DS Breakdown Voltage-Min :

55V

JESD-30 Code :

R-PSSO-G6

ECCN Code :

EAR99

Terminal Finish :

MATTE TIN OVER NICKEL

Number of Elements :

1

Peak Reflow Temperature (Cel) :

260

Transistor Element Material :

SILICON

Series :

HEXFET®

Vgs (Max) :

±20V

Time@Peak Reflow Temperature-Max (s) :

30

Drain Current-Max (Abs) (ID) :

120A

Mounting Type :

Surface Mount

Published :

2006

Terminal Position :

Single

Qualification Status :

Not Qualified

FET Type :

N-Channel

RoHS Status :

Non-RoHS Compliant

Power Dissipation-Max :

230W Tc

Avalanche Energy Rating (Eas) :

810 mJ

Pulsed Drain Current-Max (IDM) :

590A

Vgs(th) (Max) @ Id :

4V @ 150μA

Surface Mount :

yes

Number of Terminations :

6

Rds On (Max) @ Id, Vgs :

4.9m Ω @ 88A, 10V

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

5360pF @ 25V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Gate Charge (Qg) (Max) @ Vgs :

230nC @ 10V

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

55V

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Case Connection :

DRAIN

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Operating Temperature :

-55°C~175°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

10V