IRF1405ZSPBF

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Mfr.Part #
IRF1405ZSPBF
Manufacturer
Infineon Technologies
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET N-CH 55V 75A D2PAK
Stock
10,031
In Stock :
10,031

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
Terminal Form :
Gull wing
Number of Pins :
3
RoHS Status :
ROHS3 Compliant
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Rds On (Max) @ Id, Vgs :
4.9m Ω @ 75A, 10V
Mount :
Surface Mount
JESD-30 Code :
R-PSSO-G2
Lead Free :
Lead Free
Peak Reflow Temperature (Cel) :
260
JESD-609 Code :
e3
Vgs (Max) :
±20V
Continuous Drain Current (ID) :
75A
Avalanche Energy Rating (Eas) :
420 mJ
Nominal Vgs :
4 V
Power Dissipation :
230W
Number of Elements :
1
Width :
9.65mm
Mounting Type :
Surface Mount
Drain to Source Breakdown Voltage :
55V
Current - Continuous Drain (Id) @ 25°C :
75A Tc
Additional Feature :
AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
FET Type :
N-Channel
ECCN Code :
EAR99
Height :
4.826mm
Vgs(th) (Max) @ Id :
4V @ 250µA
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Fall Time (Typ) :
82 ns
Turn On Delay Time :
18 ns
Terminal Finish :
Matte Tin (Sn) - with Nickel (Ni) barrier
Drive Voltage (Max Rds On,Min Rds On) :
10V
Rise Time :
110ns
Element Configuration :
Single
REACH SVHC :
No SVHC
Length :
10.668mm
Case Connection :
DRAIN
Resistance :
4.9mOhm
Pulsed Drain Current-Max (IDM) :
600A
Turn-Off Delay Time :
48 ns
Input Capacitance (Ciss) (Max) @ Vds :
4780pF @ 25V
Time@Peak Reflow Temperature-Max (s) :
30
Packaging :
Tube
Gate to Source Voltage (Vgs) :
20V
Published :
2003
Gate Charge (Qg) (Max) @ Vgs :
180nC @ 10V
Power Dissipation-Max :
230W Tc
Threshold Voltage :
4V
Transistor Element Material :
SILICON
Operating Temperature :
-55°C~175°C TJ
Operating Mode :
ENHANCEMENT MODE
Series :
HEXFET®
Transistor Application :
SWITCHING
Number of Terminations :
2
Radiation Hardening :
No
Datasheets
IRF1405ZSPBF
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies IRF1405ZSPBF from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Mounting Type:Surface Mount, Operating Temperature:-55°C~175°C TJ, Number of Terminations:2, IRF1405ZSPBF pinout, IRF1405ZSPBF datasheet PDF, IRF1405ZSPBF amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies IRF1405ZSPBF ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies IRF1405ZSPBF


N-Channel Tube 4.9m Ω @ 75A, 10V ±20V 4780pF @ 25V 180nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IRF1405ZSPBF Overview


This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 420 mJ.The maximum input capacitance of this device is 4780pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 75A.When VGS=55V, and ID flows to VDS at 55VVDS, the drain-source breakdown voltage is 55V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 48 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 600A.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 18 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.This transistor's threshold voltage is 4V volts, which indicates that a transistor is ready to perform any of its operations at that voltage.Using drive voltage (10V), this device helps reduce its power consumption.

IRF1405ZSPBF Features


the avalanche energy rating (Eas) is 420 mJ
a continuous drain current (ID) of 75A
a drain-to-source breakdown voltage of 55V voltage
the turn-off delay time is 48 ns
based on its rated peak drain current 600A.
a threshold voltage of 4V


IRF1405ZSPBF Applications


There are a lot of Infineon Technologies
IRF1405ZSPBF applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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