IRF1405ZS

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Surface Mount

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain-source On Resistance-Max :

0.0049Ohm

Gate Charge (Qg) (Max) @ Vgs :

180nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Mode :

ENHANCEMENT MODE

JESD-30 Code :

R-PSSO-G2

Rds On (Max) @ Id, Vgs :

4.9m Ω @ 75A, 10V

Series :

HEXFET®

RoHS Status :

Non-RoHS Compliant

FET Type :

N-Channel

Drain Current-Max (Abs) (ID) :

75A

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

DS Breakdown Voltage-Min :

55V

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~175°C TJ

Packaging :

Tube

Terminal Form :

Gull wing

Number of Elements :

1

Number of Terminations :

2

Surface Mount :

yes

Pulsed Drain Current-Max (IDM) :

600A

Case Connection :

DRAIN

Published :

2003

Terminal Position :

Single

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Input Capacitance (Ciss) (Max) @ Vds :

4780pF @ 25V

Avalanche Energy Rating (Eas) :

420 mJ

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vgs (Max) :

±20V

Power Dissipation-Max :

230W Tc

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain to Source Voltage (Vdss) :

55V

Vgs(th) (Max) @ Id :

4V @ 250µA